Regensburg 2010 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 34: Poster I: III-V Semiconductors
HL 34.25: Poster
Tuesday, March 23, 2010, 18:30–20:30, Poster D2
Transport geometry dependence of magnetoresistance behaviour in wurtzite AlxGa1−xN/GaN heterostructures — •Andreas Jupe1, Kirill Trunov1, Rüdiger Schott1, Stepan Shvarkov1, Dirk Reuter1, Yvon Cordier2, and Andreas D. Wieck1,2 — 1Ruhr-Universität Bochum, Deutschland — 2Centre de Recherche sur l’Hétéro-Epitaxie et ses Applications, France
The use of a ferromagnetic semiconductor as a spin injector has attracted great interest because of possible applications in spintronics. Gd doped GaN was reported to exhibit ferromagnetism at room temperature and in this contribution, we present magnetotransport measurements at low temperature in Hall bar geometry, which were carried out on Gd doped AlxGa1−xN/GaN heterostructures. The doping has been performed by focussed ion beam implantation employing 100 kV Gd+++ ions with fluences up to 1×1012 cm−2 into molecular beam epitaxy grown wurtzite AlxGa1−xN/GaN heterostructures, containing a two dimensional electron gas 27 nm below the surface.
The influence of the Hall bar’s in-plane orientation, perpendicular to the [0001] direction on the ferromagnetic signature will be discussed.