Regensburg 2010 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 34: Poster I: III-V Semiconductors

HL 34.30: Poster

Dienstag, 23. März 2010, 18:30–20:30, Poster D2

Semipolar InN grown on m-plane sapphire using MOVPE — •Duc Van Dinh, Markus Pristovsek, and Michael Kneissl — Institute of Solid State Physics, Technische Universität Berlin, Hardenbergstraße 36, 10623 Berlin, Germany

Growth of InN is still a challenging issue even on (0001) c-plane sapphire. Thus very little results exist about growth of non-polar InN and nothing about growth of semi-polar InN on sapphire.

We have investigated the growth of InN layers on (0001) c-plane and (10-10) m-plane sapphire substrates by metal-organic vapor phase epitaxy. Similar to growth of GaN, for growth of InN on sapphire substrate, a nitridation process is employed to improve crystalline quality. By using X-ray diffraction we found that InN grown on m-plane sapphire exhibited one dominant peak of (10-13) InN. The surface morphology of (0002) InN on c-plane sapphire is much smoother than the InN grown on m-plane sapphire. The rougher surface of semi-polar InN on m-plane sapphire is likely caused by twinning of the (10-13) InN. The in-plane relationship for (10-13) InN was [30-3-2]InN//[1-210]sapphire and [1-210]InN//[0001]sapphire. The optical properties of the grown InN were also investigated by photoluminescence measurement and spectroscopic ellipsometry.