Regensburg 2010 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 34: Poster I: III-V Semiconductors

HL 34.31: Poster

Tuesday, March 23, 2010, 18:30–20:30, Poster D2

Influence of growth rate and V/III ratio on the critical layer thickness for relaxation of thick MOVPE grown InGaN layers — •André Kruse, Martin Leyer, Markus Pristovsek, and Michael Kneissl — Technische Universität Berlin, Institut für Festkörperphysik, Hardenbergstr. 36, 10623 Berlin

To improve the quality of InGaN light emitting diodes and laser diodes InGaN was grown on GaN templates with metal-organic vapour phase epitaxy (MOVPE). Two processes occur, depending on the growth parameters. First a 2D to 3D transition is seen. Depending on the indium content and the size of Quantum dots (QD) the InGaN layer decomposes lateral. For higher indium content the layer is rather homogeneous and reaches its critical thickness for relaxation. We studied systematically the influence of the InGaN growth rates at temperatures between 700 ^∘C and 850 ^∘C. Additionally the V/III ratio was varied from 2000 to 7000 to investigate the influence of surface kinetics and chemistry on homogeneity and the critical layer thickness. Growth rates and the onset of relaxation will be analysed with in-situ spectroscopic ellipsometry. Layer quality and strain state are measured ex-situ with x-ray diffraction.