Regensburg 2010 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 34: Poster I: III-V Semiconductors

HL 34.39: Poster

Tuesday, March 23, 2010, 18:30–20:30, Poster D2

Characterization of m-plane InGaN multiple quantum wells by x-ray diffraction — •Alexander Schwiegel, Heiko Bremers, Holger Jönen, Uwe Rossow, and Andreas Hangleiter — Institut für Angewandte Physik, TU Braunschweig, Germany

The performance of InGaN-based optoelectronic devices grown in the usual [0001] direction is deteriorated by strong spontaneous and piezoelectric polarization fields. In order to avoid these effects (1100) oriented films can be used. However, higher defect densities and lower in-plane rotational symmetry of the unit cell make those structures harder to characterize. We investigate InGaN/GaN multiple quantum wells (MQW) grown on m-plane SiC by X-ray diffraction and are particularly interested in determining the lattice parameters, strain state and composition of the layers. Our fivefold MQWs typically have a period length of 10 nm, a QW thickness of about 1.5 nm and reach an In-content up to 30 %. Here we present our results together with a simulation model for symmetrical scans. The intensity profiles are obtained in analogy to optics by transfer functions in consideration of the strain state and composition of the samples assuming atomically smooth interfaces.