Regensburg 2010 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe

HL: Fachverband Halbleiterphysik

HL 34: Poster I: III-V Semiconductors

HL 34.3: Poster

Dienstag, 23. März 2010, 18:30–20:30, Poster D2

Structuring the sample surface of MOVPE grown InP QDs on (Al_xGa_1−x)_0.51In_0.49P barriers by nanosphere photolithography — •Elisabeth Koroknay, Wolfgang-Michael Schulz, Clemens Wächter, Marcus Eichfelder, Robert Roßbach, Michael Jetter, and Peter Michler — Institut für Halbleiteroptik und Funktionelle Grenzflächen, Stuttgart, Germany

Systems of single and coupled quantum dots (QDs) are of high interest for quantum information processing. The material system of InP QDs embedded in (Al_xGa_1−x)_0.51In_0.49P barriers is a promising candidate for applications at elevated temperatures [1]. However MOVPE grown InP QDs in (Al)GaInP barriers show a high quantum dot density of 1.3· 10¹⁰/cm² to 8· 10¹⁰/cm² . This requires additional structuring of the sample surface after the growth process for micro-photoluminescence (µ-PL) measurements on single quantum dots and quantum dot molecules. As standard structuring methods are either time consuming (electron-beam-lithography) or limited to feature sizes of 1 µm (contact photolithography), microsphere photolithography [2] is used in order to get large area patterns in a standard UV-sensible photoresist. Here, polystyrene microspheres are used as lenses to focus the UV-light. In this way feature sizes from 300 nm to 700 nm can be realized in the photoresist which can be used for the fabrication of shadow masks and pillar structures.
[1] W.-M. Schulz et al, PRB 79, 035329 (2009)
[2] W. Wu et al, Nanoscale Res Lett 03, pp. 123 (2008)