Regensburg 2010 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 34: Poster I: III-V Semiconductors
HL 34.6: Poster
Dienstag, 23. März 2010, 18:30–20:30, Poster D2
Fabrication of μ-Schottky diode by using molecular beam epitaxy and ion beam lithography — •Asha Bhardwaj1, Ashish Rai1, Oleg Petracic2, Philipp Szary2, Hartmut Zabel2, Hans-Werner Becker3, Dirk Reuter1, and Andreas Wieck1 — 1Lehrstuhl für Angewandte Festkörperphysik, Ruhr-Universität Bochum, D-44780 Bochum, Germany — 2Experimentalphysik IV, Ruhr-Universität Bochum, D-44780 Bochum, Germany — 3Fakultät für Physik und Astronomie, Ruhr-Universität Bochum, 44780 Bochum, Germany
Schottky junctions of the metal-intrinsic-n-doped type are widely used to apply electric field to quantum dots (QD) and thus control the charge in the QDs. To apply this concept to single QD is a significant technical challenge and requires μ-Schottky diodes with an active area of approximately 1 μm. In this contribution, we present a novel approach to create such μ-diodes: After growing the basic layer sequence by molecular beam epitaxy, we define a buried stripe in the n-layer by Ar ion implantation. After that a metal line oriented perpendicular to the buried stripe is defined on the surface by electron beam lithography, so that the active area of the junction is only the overlap region of both stripes. The diode characteristic was confirmed by I-V measurements at room temperature as well as at low temperature (4.2K).