Regensburg 2010 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 36: Ge, GeSi, and Si

HL 36.1: Talk

Wednesday, March 24, 2010, 09:30–09:45, H14

Optical studies of P-, Al-, Ga- and As-doped Ge — •Matthias Allardt¹, Vladimir Kolkovsky¹, Paul Clauws², and Jörg Weber¹ — ¹Technische Universität Dresden, 01062 Dresden, Germany — ²Ghent University, 9000 Gent, Belgium

In the present work (P, As, Ga, Al) doped Ge was used to study the shallow impurities in this elemental semiconductor. Photoluminescence measurements at 4.2 K reveal for the first time the Al bound exciton observed in the LA region. The intensity of the Al bound exciton is consistent with the Al content inside the sample. Our results can be also correlated with the IR absorption measurements performed at low temperatures. We verify that Al is the dominant impurity in Al-doped Ge and the observed bound exciton signal is unambiguously related to Al.