Regensburg 2010 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 36: Ge, GeSi, and Si

HL 36.7: Talk

Wednesday, March 24, 2010, 11:15–11:30, H14

Identification of localized states on Si/SiGe quantum dots by means of ESR — •F. Lipps, F. Pezzoli, M. Stoffel, C. Deneke, J. Thomas, A. Rastelli, V. Kataev, O. G. Schmidt, and B. Büchner — Leibniz Institute for Solid State and Materials Research IFW Dresden, P.O. Box 270116, D-01171 Dresden, Germany

We performed electron spin resonance (ESR) measurements at 9.56 GHz on a series of heterostructures containing Si/SiGe quantum dots. The samples were characterized by means of transmission electron microscopy, atomic force microscopy and photoluminescence. Two distinct ESR peaks associated with electrons confined on the quantum dots were observed, characterized by different g-factors, anisotropies of the linewidth and g-factors as well as sensitivity to the illumination with sub-band gap light. Based on the structural information the electronic structure of the studied heterostructures was calculated. The single band calculations allow us to attribute the observed ESR peaks to the s- and p-like-electronic states on the quantum dots.