Regensburg 2010 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 36: Ge, GeSi, and Si
HL 36.9: Talk
Wednesday, March 24, 2010, 11:45–12:00, H14
Electrically active dopant profiles in individual silicon nanowires — •Pratyush Das Kanungo1, Xin Ou1,2, Reinhard Kögler2, Peter Werner1, Ulrich Gösele1, and Wolfgang Skorupa2 — 1Max Planck Institute of Microstructure Physics, Weinberg 2, Halle D-06120, Germany — 2Institute of Ion Beam Physics and Materials Research, Forschungszentrum Dresden-Rossendorf e.V., P.O. Box 510119, 01314 Dresden, Germany
This contribution will be presented as Poster HL 31.47.