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09:30 |
HL 36.1 |
Optical studies of P-, Al-, Ga- and As-doped Ge — •Matthias Allardt, Vladimir Kolkovsky, Paul Clauws, and Jörg Weber
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09:45 |
HL 36.2 |
Intrinsic and extrinsic diffusion of indium in germanium — •René Kube, Hartmut Bracht, Alexander Chroneos, Matthias Posselt, and Bernd Schmidt
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10:00 |
HL 36.3 |
The impact of interstitials on diffusion in germanium under proton irradiation — •Sebastian Schneider, Hartmut Bracht, Jan Klug, John Lundsgaard Hansen, Arne Nylandsted Larsen, Eugene Haller, Dominique Bougeard, Matthias Posselt, and Clemens Wündisch
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10:15 |
HL 36.4 |
Influence of electronic energy deposition on structural modification of SHI irradiated amorphous Ge layers — •Tobias Steinbach, Werner Wesch, Claudia S. Schnohr, Leandro L. Araujo, Raquel Giulian, David J. Sprouster, and Mark C. Ridgway
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10:30 |
HL 36.5 |
First Principles Study of the Oxide at the Ge-GeO2 Interface — •Jan Felix Binder, Peter Broqvist, and Alfredo Pasquarello
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10:45 |
HL 36.6 |
Transient optical gain in Germanium quantum wells — •Sangam Chatterjee, Christoph Lange, Niko S. Köster, Martin Schäfer, Mackillo Kira, Stephan W. Koch, Daniel Chrastina, Giovanni Isella, Hans von Känel, and Hans Sigg
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11:00 |
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15 Min. Coffee Break
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11:15 |
HL 36.7 |
Identification of localized states on Si/SiGe quantum dots by means of ESR — •F. Lipps, F. Pezzoli, M. Stoffel, C. Deneke, J. Thomas, A. Rastelli, V. Kataev, O. G. Schmidt, and B. Büchner
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11:30 |
HL 36.8 |
Towards efficient Silicon-based light sources using tailored photonic materials — •Norman Hauke, Thomas Zabel, Dominique Bougeard, Gerhard Abstreiter, Yasuhiko Arakawa, and Jonathan Finley
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11:45 |
HL 36.9 |
Electrically active dopant profiles in individual silicon nanowires — •Pratyush Das Kanungo, Xin Ou, Reinhard Kögler, Peter Werner, Ulrich Gösele, and Wolfgang Skorupa
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12:00 |
HL 36.10 |
Influence of oxide layer thickness on thermal properties of single silicon nanowires: a Raman study — •Asmus Vierck, Sevak Khachadorian, Janina Maultzsch, and Christian Thomsen
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12:15 |
HL 36.11 |
Isotope Effect on the Spin Resonance of Boron in Silicon — •Andre R. Stegner, Hiroyuki Tezuka, Till Andlauer, Christoph Pellinger, Kohei M. Itoh, Martin Stutzmann, and Martin S. Brandt
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12:30 |
HL 36.12 |
A theoretical study of hyperfine parameters in amorphous silicon — •Gernot Pfanner, Christoph Freysoldt, and Jörg Neugebauer
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12:45 |
HL 36.13 |
Solid-phase crystallization of amorphous silicon films by in-situ postannealing using RPCVD — •Oliver Skibitzki, Yuji Yamamoto, Klaus Köpke, Andreas Schubert, Günter Weidner, Bernd Heinemann, and Bernd Tillack
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