Regensburg 2010 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 38: ZnO and Related Semiconductors

HL 38.11: Vortrag

Mittwoch, 24. März 2010, 12:15–12:30, H17

Electrical characterization of single-crystal ZnO grown by different techniques. — •Vladimir Kolkovsky, Leopold Wolff, Xi Zhang, and Joerg Weber — Technische Universität Dresden, 01062 Dresden

In the present study single-crystal ZnO grown by different techniques (hydrothermal technology, melting-grown crystals and crystals from the vapor phase) have been investigated with electrical measurements such as current-voltage (IV), capacitance-voltage (CV) and deep level transient spectroscopy (DLTS). Properties of Schottky contacts formed on ZnO grown with these techniques have been also analysed and compared. In DLTS studies dominant peaks appear in the range of 120-170 K in all materials studied. However, the properties of the DLTS lines are different and depend on the growth procedure of ZnO. The origin of these lines will be discussed in the present work.