Regensburg 2010 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 38: ZnO and Related Semiconductors

HL 38.2: Talk

Wednesday, March 24, 2010, 09:45–10:00, H17

Patterned growth of ZnO nanopillars — •Manfred Madel, Yong Xie, Martin Feneberg, Thilo Zoberbier, Benjamin Neuschl, Uwe Röder, and Klaus Thonke — Institut für Halbleiterphysik, Universität Ulm

To get a regular hexagonal arrangement of ZnO nanopillars on sapphire substrate, self-assembling monolayers of polystyrene (PS) spheres are used to cover a-plane sapphire substrates on which gold or nickel catalysts are deposited. We employ wet-chemical etching to remove the catalyst regions not protected by the PS. After lift-off of the colloid spheres a well prepatterned catalyst structure is obtained as confirmed by atomic force measurements. After optimizing the growth conditions ZnO nanopillars with diameters between 200 and 500 nm and lengths up to 5 µ m are grown in hexagonal arrays on areas larger than 1 mm². Photoluminescence measurements show a perfect crystal quality with a full width at half maximum below 250 µ eV for donor bound exciton lines in ZnO.