Regensburg 2010 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 39: Photovoltaics II

HL 39.1: Talk

Wednesday, March 24, 2010, 09:30–09:45, H3

Sputter deposition of Cu₂O thin films, nitrogen-doping and formation of Cu₂O−ZnO p/n junctions — •Swen Graubner, Achim Kronenberger, Julian Benz, Daniel Reppin, Martin Fischer, Angelika Polity, Detlef Hofmann, Torsten Henning, Peter Klar, and Bruno K. Meyer — I. Physikalisches Institut, JLU Giessen

Cu₂O is one of the rare intrinsically p-type conducting semiconductors, in addition the energy of its band gap is in the visible spectral range. Thus it is considered to be a promising material for thin-film-solar cell applications. Metallic and ceramic sputtering processes can be used for the thin-film deposition. Depending on the oxygen partial-pressure, the stoichiometric properties of Cu_xO are adjustable from x=2 to x=1. The electrical properties change considerably depending on the copper-to-oxygen-ratio. It is commonly assumed that copper-vacancies are the dominant intrinsic acceptors in Cu₂O, thus high carrier concentrations come along with a reduced crystalline quality. Using nitrogen-gas for doping allows carrier concentrations of p = 10¹⁵−10¹⁷ cm⁻³ without significantly reducing the structural properties of the Cu₂O-thin-films. By using ZnO as n-type semiconductor, first p/n hetero-junctions were realized. The mesa etched structures show rectifying behaviour and its electrical properties will be discussed on the conference.