Regensburg 2010 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 39: Photovoltaics II

HL 39.6: Vortrag

Mittwoch, 24. März 2010, 11:00–11:15, H3

Shunts in Thin-Film Photovoltaics — •Stephanie Malek¹, Uli F. Wischnath¹, Juan Rechid², Ingo Riedel¹, and Jürgen Parisi¹ — ¹Energy and Semiconductor Research Laboratory, Department of Physics, University of Oldenburg, 26111 Oldenburg, Germany — ²CIS Solartechnik GmbH & Co. KG, 20539 Hamburg, Germany

Shunts can lead to severe performance reductions in thin film solar cells. This work aims to look in more detail at the shunts in order to find their microscopic causes.

Localization of hot spots is commonly addressed by infrared thermography via visualization of the Joule heating. The resolution of this method is restricted to the μm-range. We use Lock-In-Thermography (LIT) for the fast localization of imperfections in order to identify positions of interest. For more detailed analysis of hot spots we use high resolution microscopy like Scanning Electron Microscopy (SEM) and AFM-based Scanning Thermal Microscopy (SThM). These small-scale investigations can for example reveal if areas of high heat dissipation are rather related to the inner structure of the involved thin films or to accidentally incorporated imperfections.