HL 3: Preparation and Characterization
Monday, March 22, 2010, 10:15–11:45, H14
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10:15 |
HL 3.1 |
In situ AFM characterization of e-beam exposed PMMA — Hans Koop, •Daniel Schnurbusch, Michael Müller, Tobias Gründl, Markus C. Amann, Khaled Karrai, and Alexander W. Holleitner
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10:30 |
HL 3.2 |
Focused ion beam lithography for rapid prototyping of metallic films — •Patrick Osswald, Josef Kiermaier, Markus Becherer, and Doris Schmitt-Landsiedel
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10:45 |
HL 3.3 |
In situ PES analysis of ultra-thin ZnO layers grown by atomic layer deposition — •Eike Janocha and Christian Pettenkofer
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11:00 |
HL 3.4 |
In situ characterization of VPE prepared Si(100) surfaces via RAS — •Sebastian Brückner, Henning Döscher, Anja Dobrich, Oliver Supplie, Christian Höhn, and Thomas Hannappel
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11:15 |
HL 3.5 |
Strain measurements on semiconductors: Raman experi-ments and simulation — •Andreas Talkenberger, Gert Irmer, Martin Abendroth, Christian Röder, and Cameliu Himcinschi
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11:30 |
HL 3.6 |
High temperature dielectric function of Silicon, Germanium and GaN — •Martin Leyer, Markus Pristovsek, and Michael Kneissl
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