Regensburg 2010 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 4: Photovoltaics I: mainly CIGS

HL 4.8: Vortrag

Montag, 22. März 2010, 12:15–12:30, H15

Cu poor phases at Cu(In,Ga)Se2/CdS interfaces — Andreas Klein, Thomas Schulmeyer, Ralf Hunger, and •Tobias Adler — TU Darmstadt, Institute of Materials Science, Petersenstrasse 32, 64287 Darmstadt

The absorber surfaces and interfaces in Cu(In,Ga)Se2 (CIGS) thin film solar cells are affected by Cu-poor phases like Cu(In,Ga)3Se5 or Cu(In,Ga)5Se8, which are often referred to as ordered vacancy compounds. We have performed photoemission studies of de-capped CIGS surfaces and their interface with CdS. The band alignments and temperature dependent binding energy shifts provide evidence that interfaces of In-rich CIGS films are Cu-poor, while interfaces of Ga-rich CIGS films are stoichiometric.