HL 41: Quantum Dots and Wires: Preparation and Characterization II
Mittwoch, 24. März 2010, 11:00–12:45, H13
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11:00 |
HL 41.1 |
Selective MBE-growth of GaN nanowires on patterned substrates — •Timo Schumann, Tobias Gotschke, Toma Stoica, Friedrich Limbach, and Raffaella Calarco
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11:15 |
HL 41.2 |
Electrochemical analysis of Si and Mg doped GaN nanowires — •Jens Wallys, Sascha Hoffmann, Florian Furtmayr, Markus Schäfer, Jörg Teubert, Jörg Schörmann, and Martin Eickhoff
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11:30 |
HL 41.3 |
Vertical and lateral heterostructure of GaN/InGaN within nanowires — •Friederich Limbach, Tobias Gotschke, Toma Stoica, Raffaella Calarco, Eli Sutter, Ramon Cusco, and Luis Artus
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11:45 |
HL 41.4 |
MBE grown InN nanowires: Doping effects of Si and Mg — •Tobias Gotschke, Friederich Limbach, Roberta Caterino, Toma Stoica, Eike Oliver Schäfer-Nolte, Raffaella Calarco, and Elli Sutter
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12:00 |
HL 41.5 |
MOVPE overgrowth of InN quantum dot like structures — •Christian Meißner, Michael Högele, Raimund Kremzow, Markus Pristovsek, and Michael Kneissl
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12:15 |
HL 41.6 |
DLTS measurements on GaSb/GaAs quantum dots — •Annika Högner, Tobias Nowozin, Andreas Marent, Dieter Bimberg, Chi-Che Tseng, and Shih-Yen Lin
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12:30 |
HL 41.7 |
Investigating Axial Zinc Doping Profile in Galliumarsenide Nanowires with Kelvin Force Microscopy and Scanning Microwave Microscopy — •Matthias Fenner, Hassan Tanbakuchi, C. Gutsche, A. Lysov, I. Rgolin, W. Prost, and F.-J. Tegude
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