Regensburg 2010 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 42: Focussed Session: Silicon Photonics
HL 42.1: Hauptvortrag
Mittwoch, 24. März 2010, 14:00–14:30, H13
Recent advances in silicon-based photonic devices — •Delphine Marris-Morini1, Laurent Vivien1, Gilles Rasigade1, Papichaya Chaisakul1, Xavier Le Roux1, Eric Cassan1, Jean-Marc Fedeli2, Daniel Chrastina3, and Giovanni Isella3 — 1Institut d'Electronique Fondamentale, Université Paris Sud - CNRS, bât. 220, 91405 Orsay, France — 2CEA, LETI, Minatec 17 rue des Martyrs, 38054 Grenoble cedex 9, France — 3L-NESS Politecnico di Milano, Polo Regionale di Como, Via Anzani 42, 22100 Como, Italy
In the past few years, the interest in silicon photonics has greatly increased. Silicon on insulator (SOI) guiding structures have been successfully demonstrated and research focuses now on active devices. The state of the art in optical modulators and photodetectors will be presented, and recent results obtained in the group will be detailed. For optical modulation, both electro-refraction and electro-absorption can be used. In silicon, free-carrier concentration variation is the most efficient way to achieve refractive index variation. We have experimentally demonstrated a 15 GHz modulator with low insertion loss and large modulation contrast. We are also investigating electro-absorption mechanisms, especially the quantum confined Stark effect (QCSE), in SiGe/Ge multiple quantum well (MQW) heterostructures. For high performance integrated photodetectors, we have chosen to use pure germanium grown on silicon. 40 Gbit/s data transmission has been achieved with a responsivity of 1 A/W in the 1.3 1.6 um wavelength range.