Regensburg 2010 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 42: Focussed Session: Silicon Photonics

HL 42.3: Topical Talk

Wednesday, March 24, 2010, 15:00–15:30, H13

Miniband-related IR luminescence of Ge/Si quantum dot superlattices — •Peter Werner — MPI für Mikrostrukturphysik, Weinberg 2, Halle (Saale)

Highly strained Si/Ge multi-layer heterostructures incorporating Ge quantum dots may show strong IR luminescence even at room temperature. Calculations of the electronic band structure and luminescence measurements prove the existence of an electron miniband within the columns of the QDs. Such a miniband formation results in a conversion of the indirect to quasi-direct excitons. The optical transitions between electron states within the miniband and hole states within QDs are responsible for an intense photoluminescence in the 1.4 - 1.8 micrometer range. The talk will present basics of the crystal growth of such staked multi-layers as well as the analysis of their luminescence properties. Such multi-layers can be applied for LED concepts including etched nanostructures.