Regensburg 2010 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 42: Focussed Session: Silicon Photonics

HL 42.7: Topical Talk

Wednesday, March 24, 2010, 17:15–17:45, H13

Monolithic integration of lattice-matched Ga(NAsP)-based laser device structures on (001) Silicon — •Kerstin Volz and Wolfgang Stolz — Philipps University Marburg, Materials Science Center and Faculty of Physics, Marburg, Germany

The novel, direct band gap, dilute nitride Ga(NAsP)-material system allows for the first time for the monolithic integration of a III/V-based active laser material lattice matched to exact (001) Si substrates. This lattice-matched approach results in a high-quality, low defect density integration leading to long-term stable laser devices on Si-substrates.

Broad area laser structures consist of pseudomorphically strained active Ga(NAsP)/(BGa)(AsP) multi-quantum-well heterostructures embedded in thick doped (BGa)P waveguide layers, grown by a specific low-temperature metal organic vapour phase epitaxy (MOVPE) process on (001) Si-substrate. The optimization of the laser properties focus on improvements in material quality based on MOVPE growth and nucleation conditions as well as the design parameters such as optimal carrier and light field confinement, doping levels and post-growth annealing treatments.

This paper will present and discuss the current status to realise electrical injection laser diodes as a basis for Si-photonics.