Regensburg 2010 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 43: Electronic Structure and Atomistic Modeling

HL 43.5: Talk

Wednesday, March 24, 2010, 15:00–15:15, H14

The Atomistic-Continuum Modeling of Short Pulse Laser Interaction with Semiconductors — •Dmitriy Ivanov, Baerbel Rethfeld, and Vladimir Lipp — Physics Department, Technical University of Kaiserslautern, Kaiserslautern, Germany

The understanding of fundamental mechanisms behind the sub-wave length surface modification on semiconductors is of a great importance for Information Technologies. However, strong laser-induced phase perturbations, occurring under conditions of nonequilibrium between free laser-generated carriers and phonons, make the experimental and theoretical study of short pulse laser nanostructuring on semiconductors difficult. Previously, the atomistic-continuum approach for modeling of short-pulse laser interactions with metals have been proven as an efficient tool when studying processes of laser melting, ablation, and nanostructuring on metals.

In present work, a computational technique that combines the advantages of different approaches into the atomistic-continuum model for semiconductors is developing on the example of Si. In the combined model, 1) the kinetics of fast non equilibrium phase transformations is treated at atomic level with Molecular Dynamics method, and 2) the description of laser light absorption by free carriers, their transport dynamics, and strong laser-induced non equilibrium between free carriers and phonons are accounted for in the continuum part by means of free carrier dynamics model.