Regensburg 2010 – scientific programme
Parts | Days | Selection | Search | Downloads | Help
HL: Fachverband Halbleiterphysik
HL 45: Group-III-Nitrides: Optical Properties II
HL 45.8: Talk
Wednesday, March 24, 2010, 16:30–16:45, H15
Dielectric function of AlInN nearly lattice-matched to GaN — •Egidijus Sakalauskas1, Pascal Schley1, Georg Roßbach1, Rüdiger Goldhahn1, Hannes Behmenburg2,3, Christoph Giesen2, Michael Heuken2,3, Christoph Hums4, and Alois Krost4 — 1Institut für Physik, TU Ilmenau — 2Aixtron AG — 3Institut für Theoretische Elektrotechnik, RWTH Aachen — 4Institut für Experimentalphysik, Otto-von-Guericke Universität Magdeburg
Al1−xInxN material with ∼18 % indium content is lattice matched to GaN and has lot of potential applications for photonic and electronic devices. In our work we carry out a comprehensive study of high-quality MOCVD-grown c-plane Al1−xInxN films with In content ranging from 14 to 22 %. High resolution X-ray diffraction measurements revealed that AlInN films are pseudomorphically grown to GaN. Ellipsometry studies were conducted on the AlInN samples in the photon energy range from 1 to 10 eV. For the first time, complex effective ordinary dielectric function (DF) of AlInN nearly lattice-matched (LM) to GaN was extracted and the critical points of the band structure were determined. The pronounced optical transitions in the high-photon energy part of the DF indicate already promising optical quality of the AlInN films. The sharp onset of the imaginary part of the DF defines the direct absorption edge which is red-shifted for the AlInN samples with higher In content. High frequency dielectric constants were estimated from the real part of the DF in the transparent region. The band gap values are evaluated including the influence of strain.