Regensburg 2010 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 46: Quantum Dots and Wires: Transport
HL 46.11: Vortrag
Mittwoch, 24. März 2010, 16:45–17:00, H17
Electronic Transport in Fully Oxidized Silicon Nanowires — •Mohammad Koleini1, Lucio Colombi Ciacchi1, and Marivi Fernandez-Serra2 — 1Hybrid Materials Interfaces (HMI), Faculty of Production Engineering and Bremen Center for Computational Materials Science, University of Bremen, 28359 Bremen, Germany — 2Department of Physics and Astronomy and New York Center for Computational Science, Stony Brook University, Stony Brook, New York 11794-3800, USA
We present the first realistic model of an ulta-thin Silicon Nanowire (SiNW) grown along the <100> crystallographic direction with a natively fully oxidized surface. Ballistic transport in such SiNW has been studied by ab initio modeling, combining density functional theory and nonequilibrium Green's function techniques. A comparison with the pristine SiNW reveals the effect of oxidation on the electronic properties of the wire. The effect of p- and n-type dopants on the conductance of the oxidized SiNW has been studied extensively. The results indicate a strong coupling between the electronic properties of the dopants and the wire oxide shell, showing the need to explicitly consider the core-shell structure of SiNWs in theoretical transport studies.