Regensburg 2010 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 48: Semiconductor Lasers

HL 48.10: Talk

Thursday, March 25, 2010, 12:00–12:15, H13

Exceeding 1 W output power of a red AlGaInP-VECSEL emitting at 665 nm — •Thomas Schwarzbäck, Marcus Eichfelder, Wolfgang-Michael Schulz, Robert Roßbach, Michael Jetter, and Peter Michler — Institut für Halbleiteroptik und Funktionelle Grenzflächen, Universität Stuttgart, Allmandring 3, 70569 Stuttgart, Germany

Vertical external cavity surface-emitting lasers (VECSELs) have emerged recently as an important category of power-scalable semiconductor lasers in a wide range of applications in biophotonics, television or projectors and spectroscopy. With usage of external cavities and optical pumping, VECSELs achieve high continuous-wave output power and near-diffraction-limited beam quality with a TEM₀₀ Gaussian beam profile.

We present a VECSEL system based on a multi-quantum-well structure with 20 compressively-strained GaInP quantum wells (QWs) for an operation wavelength of around 665 nm. Five QW packages are placed in (Al_0.55Ga_0.45)_0.51In_0.49P cladding layers in a resonant periodic gain design. Each package consists of four QWs embedded in (Al_0.33Ga_0.67)_0.51In_0.49P barriers, respectively. The 3λ cavity is fabricated on an Al_0.50Ga_0.50As/AlAs distributed Bragg reflector. By bonding an intra-cavity diamond heatspreader on the chip, continuous-wave operation exceeding 1 W output power is achieved.

We show key parameters like power transfer characteristics, beam profile and spectra of the laser. The measurement of the beam propagation factor is also presented.