Regensburg 2010 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 48: Semiconductor Lasers
HL 48.11: Vortrag
Donnerstag, 25. März 2010, 12:15–12:30, H13
Tuning the emission wavelength of interband cascade lasers in the 3-4µ m spectral range — •Matthias Dallner1, Adam Bauer1, Fabian Langer1, Marcin Motyka2, Grzegorz Sek2, Krzysztof Ryczko2, Jan Misiewicz2, Martin Kamp1, Sven Höfling1, Lukas Worschech1, and Alfred Forchel1 — 1Technische Physik, University of Würzburg, Röntgen Research Center for Complex Material Systems, Am Hubland, 97074 Würzburg, Germany — 2Institute of Physics, Wrocław University of Technology, Wybrzeze Wyspiańskiego 27, 50-370 Wrocław, Poland
Interband cascade lasers (ICLs) are a unique type of semiconductor lasers, which is very promising to cover the mid-infrared wavelength range from 3-4µ m. In contrast to conventional diode lasers, in ICLs only electrons are injected, although the laser operation is driven by interband transitions. The special broken gap alignment within the active quantum wells (QWs), combined with electronic band gap engineering, allows to achieve the needed population inversion. In addition, ICLs can make use of various active cascades to provide higher gain.
In this work we fabricated and investigated ICLs and reference QWs with regards to the dependence of active QW thickness on emission wavelength. Room temperature operation has been achieved and a emission range between 2.97 to 4.16µ m could be covered. An average tuning rate of 0.55µ m per monolayer was obtained from photoluminescence and electrically driven ICL device data. This was confirmed by theoretical band structure calculations. Furthermore, a temperature dependent tuning behavior of 1.88nm/K was found.