Regensburg 2010 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 48: Semiconductor Lasers

HL 48.2: Talk

Thursday, March 25, 2010, 09:45–10:00, H13

Quantum Dot Based Electro Absorption Waveguide Modulator — •Mirko Stubenrauch, Christian Meuer, Gerrit Fiol, and Dieter Bimberg — Institut für Festkörperphysik, Technische Universität Berlin, EW 5-2, Hardenbergstr. 36, 10623 Berlin, Germany

InAs quantum dot (QD) based electro absorption ridge waveguide modulators (EAM) having different length and layer number are fabricated and tested. The operation wavelength of the devices is around 1.3 µm and the fast change of electro absorption is induced by the Quantum Confined Stark Effect (QCSE). Transmission spectra simulations based on kp-calculations including charge carrier Coulomb interaction predict a QCS shift of 20 nm and an extinction ratio of maximum 35 dB at 10 V reverse bias. These results are compared to experimentally achieved values for maximum absorption edge shift of 15 nm at an applied field of 240 kV/cm, corresponding to 9 V reverse voltage. Transmission power measurements show the highest extinction ratio of 18 dB reached so far for QD devices at a wavelength of 1315 nm. First dynamic scattering parameter measurements using a completely calibrated network analyzer show a maximum 3dB bandwidth of 17 GHz at a wavelength of 1310 nm with an applied reverse bias of 1.5 V. These are promising results for monolithic integration with single mode emitting lasers, e.g. distributed feedback lasers.