Regensburg 2010 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 48: Semiconductor Lasers

HL 48.4: Vortrag

Donnerstag, 25. März 2010, 10:15–10:30, H13

Charaterization of red VCSELs via S-Parameter Analysis — •Hendrik Niederbracht¹, Marcus Eichfelder¹, Wolfgang Vogel², Michael Wiesner¹, Sandra Klinger², Robert Roßbach¹, Michael Jetter¹, Manfred Berroth², and Peter Michler¹ — ¹Institut für Halbleiteroptik und Funktionelle Grenzflächen, 70550 Stuttgart, Germany — ²Institut für Elektrische und Optische Nachrichtentechnik, 70550 Stuttgart, Germany

The future optical data transmission via Polymer Optical Fibre needs devices which are able to achieve high modulation frequencies. The ideal candidates for this task are vertical-cavity surface-emitting laser (VCSEL) due to their splendid properties. In this presentation we show small signal modulation measurements examined by the method of scattering (S)–parameter analysis to characterize 660 nm AlGaInP–based VCSELs. Based on S₁₁ measurements and an equivalent circuit model for the VCSEL geometry, device values are revealed. First steps of optimization are shown, allowing a higher modulation frequency, mainly by reducing parasitic pad capacitance. The area surrounding the mesa was reduced and the spatial distance between p– and n–contacts was increased by a thick layer of high dielectric material. The intrinsic response is evaluated through the simulated low pass and the measurement of the |S₂₁|–parameter. The difference between single and multiple apertures for current confinement reducing intrinsic capacitance is also part of the presentation.