Regensburg 2010 – scientific programme
Parts | Days | Selection | Search | Downloads | Help
HL: Fachverband Halbleiterphysik
HL 48: Semiconductor Lasers
HL 48.7: Talk
Thursday, March 25, 2010, 11:15–11:30, H13
Two-section DBR lasers based on surface defined gratings for high-speed applications — •Sohaib Afzal1, Florian Schnabel1, Wenzel Scholz1, Johann Peter Reithmaier1, Gadi Eisenstein2, Amir Capua2, Evgeny Shumakher2, Petri Melanen3, and Ville Vilokkinen3 — 1Technische Physik, Institute of Nanostructure Technologies and Analytics (INA), Universität Kassel, 34132, Kassel, Germany — 2Technion, Electrical Engineering Department. Technion City Haifa 32000, Israel — 3Modulight Inc. FIN-33720, Tampere, Finland
To realize low-cost high-performance lasers for high-speed optical transmission a new surface-defined grating etching process was developed based on a four gas ICP-RIE etching process, which allow high aspect ratios of > 1:15. The gratings are lithogaphically defined on the sample surface by e-beam lithography, but could be easily adapted by low-cost large volume nanoimprint lithography. The gratings are formed lateral to the ridge in 1st and 2nd order with a trench width of about 120 nm and an etch depth of about 2 um. With this surface defined patterning techique two-section DBR lasers were fabricated on a 1.3 um InP laser material, which exhibit low cw threshold currents down to 8 mA by pumping the grating section at 50 mA (total device length = 900 um). The influence of the grating period and operation temperature on the threshold current and emission wavelength will be discussed. First small signal measurement results show a -3dB bandwidth of 10 GHz with an extrapolated max. bandwidth of about 40 GHz.