Regensburg 2010 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 49: Optical Properties
HL 49.11: Vortrag
Donnerstag, 25. März 2010, 12:15–12:30, H14
Near band edge luminescence of ZnN thin layers — •Ronny Kirste1, Jebreel M. Khoshman2, Martin E. Kordesch3, Markus R. Wagner1, Jan-Hindrik Schulze1, Gordon Callsen1, and Axel Hoffmann1 — 1Institut für Festkörperphysik, TU Berlin, Berlin, Germany — 2Al-Huessin Bin Talal University, Ma-an, Jordan — 3Department of Physics and Astronomy, Ohio University, Athens, OH 45701, United States
The novel material ZnN may help to understand the nitrogen doping in ZnO. Additionally, ZnN is a possible candidate for optical devices like hot and cold mirrors. However, nearly none of the basic physical properties are known, so far. Even the band gap of ZnN is still under discussion. In this contribution we present PL measurements for 200nm thick ZnN samples grown on SiO2 via RF sputtering. The successful ZnN growth was confirmed by XRD. PL measurements in different ambient gases indicate that the low energy signal between 2.0 and 3.0 eV which sometimes is attributed to ZnN is indeed related to surface oxygen. On the other hand a high energy peak at 3.41 eV arises, which is attributed to the ZnN layer. Temperature dependent measurements were performed revealing a shift of this peak from 3.41 eV at 4.2 K to 3.44 eV at room temperature. Finally, time resolved measurements were performed in order to understand the origin of the high energy signal.