Regensburg 2010 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 49: Optical Properties
HL 49.6: Vortrag
Donnerstag, 25. März 2010, 10:45–11:00, H14
FIB implantation induced site-selectively grown self-assembled InAs QDs in a light emitting µ-diode — Minisha Mehta1, •Cedrik Meier1, Dirk Reuter2, Andreas D. Wieck2, Stefan Michaelis de Vasconcellos2, Tim Baumgarten1, and Artur Zrenner1 — 1Physics Department, University of Paderborn, Paderborn , Germany — 2Applied Solid State Physics, Ruhr University of Bochum, Bochum, Germany
We present an approach for fabrication of intentionally positioned epitaxial InAs QDs in a micron sized light emitting diode. For site-selective growth, a combination of molecular beam epitaxy (MBE) and focused ion beam (FIB) implantation technology in an all-ultra-high-vacuum (UHV) setup has been employed. Single dot occupancy of almost 55 % on FIB patterned nano-depressions was successfully achieved. Thereafter, carrier injection and subsequent radiative recombination from the positioned InAs/GaAs self-assembled QDs was investigated by embedding these QDs in the intrinsic part of a GaAs-based micron sized p-i-n junction device. Few or single dot are expected to be electrically addressed in these devices. We report results from electroluminescence (EL) measurement which proves the single dot characteristics of our device. The EL spectra consist of sharp emission lines and their dependence on injection current shows linear behavior for exciton and quadratic behavior for biexciton recombination. Furthermore, estimation of built-in dipole moment in InAs quantum dots due to stark shift in EL spectra will be given. Financial support by the BMBF via the NanoFutur grant 03X5509-NanoPhox and the NanoQuit program.