Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe

HL: Fachverband Halbleiterphysik

HL 49: Optical Properties

HL 49.9: Vortrag

Donnerstag, 25. März 2010, 11:45–12:00, H14

Optical properties of high-quality cubic AlN, GaN, AlGaN and AlN/GaN MQWs grown on 3C-SiC — •Marcus Röppischer¹, Christoph Cobet¹, Norbert Esser¹, Georg Rossbach², Rüdiger Goldhahn², Martin Feneberg³, Benjamin Neuschl³, Klaus Thonke³, Thorsten Schupp⁴, Klaus Lischka⁴, and Donat As⁴ — ¹ISAS - Institute for Analytical Sciences, 12489 Berlin — ²Institut für Physik, Technische Universität Ilmenau, 98684 Ilmenau — ³Institut für Halbleiterphysik, Universität Ulm, 89069 Ulm — ⁴Department Physik, Universität Paderborn, 33098 Paderborn

It was recently demonstrated, that the quality of zincblende group-III nitrides can be considerably improved if bulk 3C-SiC(001) is used as the substrate for the deposition of the films by molecular beam epitaxy. For example, phase-pure cubic GaN and AlN has been achieved, and intersubband absorption of short-period GaN/AlN MQWs in the infra-red was demonstrated. Despite this progress, fundamental optical properties of these materials have not been reported so far. In this contribution, we present a comprehensive characterization of cubic AlN, GaN, AlGaN and related MQWs. The shape of the dielectric functions (DF) from 0.56 eV up to 20 eV, as obtained by ellipsometry, as well as photoreflectance (PR), photo- (PL) and cathodoluminescence (CL) spectra will be discussed in detail.