Regensburg 2010 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 52: Heterostructures
HL 52.10: Talk
Thursday, March 25, 2010, 12:30–12:45, H17
Site-selective molecular beam epitaxial growth of InAs quantum dots on pre-patterned GaAs substrates — •Mathieu Helfrich1,2, Dongzhi Hu2, Joshua Hendrickson3, Daniel Rülke1,4, Pablo Aßhoff1,2,4, Heinz Kalt1,2,4, Michael Hetterich1,2,4, Galina Khitrova3, Hyatt M. Gibbs3, and Daniel M. Schaadt2 — 1Institut für Angewandte Physik, Karlsruhe Institute of Technology (KIT), 76131 Karlsruhe, Germany — 2DFG-Center for Functional Nanostructures, Karlsruhe Institute of Technology (KIT), 76131 Karlsruhe, Germany — 3College of Optical Sciences, The University of Arizona, Tucson, AZ 85721, USA — 4KSOP - Karlsruhe School of Optics and Photonics, Karlsruhe Institute of Technology (KIT), 76131 Karlsruhe, Germany
Semiconductor quantum dots (QDs) are promising candidates for the realisation of a quantum computer. Integrating QDs into optical resonator structures may be one way to realise such a device. Therefore, it is necessary to fabricate QDs with controllable properties at pre-defined positions. It has been demonstrated that pre-patterning of the substrate offers a tool to achieve good control of QD nucleation sites. However, site-controlled QDs still lack in quality compared to randomly nucleated QDs. Post-growth treatment is believed to enhance the optical properties of site-controlled QDs and is investigated in this study. InAs QDs are grown on pre-patterned GaAs (100) substrates by molecular beam epitaxy and are analysed by atomic force microscopy, scanning electron microscopy and photoluminescence measurements.