Regensburg 2010 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe
HL: Fachverband Halbleiterphysik
HL 56: Non- and Semi-polar Group-III-Nitrides
HL 56.10: Vortrag
Donnerstag, 25. März 2010, 16:30–16:45, H15
Detailed investigation of the defect-related emissions around 3.3 eV in GaN ELOG structures — •Ingo Tischer1, Hady Yacoub1, Martin Schirra1, Martin Feneberg1, Thomas Wunderer2, Ferdinand Scholz2, Levin Dieterle3, Erich Müller3, Dagmar Gerthsen3, and Klaus Thonke1 — 1Institut für Halbleiterphysik, Universität Ulm, 89069 Ulm — 2Institut für Optoelektronik, Universität Ulm, 89069 Ulm — 3Laboratorium für Elekronenmikroskopie, Universität Karlsruhe, 76128 Karlsruhe
We investigate the origin of defect-related emission lines in a sample with triangular shaped GaN stripes forming semipolar {1101} facets. The emission lines between 3.0 eV and 3.41 eV are characterized by high resolution transmission electron microscopy (HRTEM) and scanning electron microscope cathodolumence (SEM-CL). We are able to distinguish between different types of basal plane stacking faults which correspond to different emission energies. The assignment of the optical features to the different types of basal plane stacking faults and other defects are discussed using a one-to-one correlation between HRTEM and SEM-CL results.