Regensburg 2010 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 56: Non- and Semi-polar Group-III-Nitrides

HL 56.14: Talk

Thursday, March 25, 2010, 17:30–17:45, H15

Growth of planar semipolar GaN via epitaxial lateral overgrowth on pre-patterned sapphire substrate — •Stephan Schwaiger, Ilona Argut, Thomas Wunderer, Frank Lipski, Rudolf Rösch, and Ferdinand Scholz — Institute of Optoelectronics, University of Ulm

We report on the growth of planar semipolar GaN on pre-patterned sapphire substrates via metalorganic vapor phase epitaxy. The sapphire templates were structured with grooves perpendicular to the c-direction of the crystal. Using appropriate growth parameters semipolar GaN can be grown from the c-plane like sidewall of the patterned sapphire, resulting in a flat and planar semipolar surface. Hence, this method allows the growth of semipolar GaN on large areas. Scanning electron, transmission electron and atomic force microscopy measurements show an atomically flat surface. Photoluminescence spectroscopy spectra show the high quality of the material since the spectra are dominated by the near band edge emission but still exhibit some defect related contributions. Furthermore high resolution x-ray diffraction rocking curve measurements result in small full widths at half maximum of less than 400arcsec for both, the symmetrical reflection and the asymmetrical (0002) reflection.