Regensburg 2010 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 56: Non- and Semi-polar Group-III-Nitrides

HL 56.3: Vortrag

Donnerstag, 25. März 2010, 14:30–14:45, H15

Heteroepitaxial growth of basal plane stacking fault free a-plane GaN — •Matthias Wieneke, Thomas Hempel, Martin Noltemeyer, Hartmut Witte, Armin Dadgar, Jürgen Bläsing, Jürgen Christen, and Alois Krost — Otto-von-Guericke Universitaet Magdeburg, FNW/IEP, Postfach 4120, 39016 Magdeburg

Growth of light emitting quantum-wells based on a-plane GaN is a possibility to reduce or even to avoid polarization correlated luminescence red shift and reduction of radiative recombination efficiency. But until now heteroepitaxially grown a-plane GaN films are characterized by a poor crystalline quality expressed by a high density of basal plane stacking faults (BSF) and partial dislocations. We will present Si doped a-plane GaN films grown on r-plane sapphire substrates by metal organic vapor phase epitaxy using high temperature AlGaN nucleation layers. FE-SEM images revealed three dimensionally grown GaN crystallites sized up to tenth micrometer in the basal plane and a few tenth micrometers along the c-axes. Though, the full width at half maxima of the X-ray diffraction ω-scans of the in-plane GaN(1-100) and GaN(0002) Bragg reflections exhibited a very high crystal quality. Furthermore, luminescence spectra were dominated by near band gap emission, while there was no separated peak of the basal plane stacking fault. In summary we will present heteroepitaxially grown a-plane GaN without an evidence of basal plane stacking faults in X-ray diffraction measurements and luminescence spectra.