Regensburg 2010 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 56: Non- and Semi-polar Group-III-Nitrides

HL 56.6: Vortrag

Donnerstag, 25. März 2010, 15:15–15:30, H15

Growth of M- and A-plane GaN on LiGaO₂ by plasma-assisted MBE — •Ralf Schuber¹, Mitch M.C. Chou², and Daniel M. Schaadt¹ — ¹Institut für Angewandte Physik/DFG-Center for Functional Nanostructures (CFN), Karlsruher Institut für Technologie (KIT), 76131 Karlsruhe, Germany — ²Department of Materials Science and Opto-electronic Engineering, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan, ROC

Non-polar GaN presents a way to circumvent unwanted effects which arise due to its intrinsically built-in electric fields. Since GaN substrates are not readily available for homoepitaxy, various alternative substrates have been examined for growth of high quality M- or A-plane GaN crystals. LiGaO₂ (LGO) presents the closest lattice matched substrate that has been considered for GaN heteroepitaxy. However, so far only C-plane growth of GaN has been reported on (001)LGO.

Here we present the successful growth of M-plane GaN on (100)LGO and A-plane GaN on (010)LGO for the first time using plasma-assisted molecular beam epitaxy. Structural and morphological analysis was performed using x-ray and reflective high energy electron diffraction, scanning electron and atomic force microscopy. The phase purity of the grown films is shown to be very high. The surface morphology is in both cases flat and smooth.