Regensburg 2010 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 57: Focussed Session: ZnO-based Semiconductors

HL 57.11: Talk

Thursday, March 25, 2010, 17:15–17:30, H17

Charge states of a hydrogen defect (3326 cm⁻¹ line) in ZnO — •Frank Herklotz, Eduard Lavrov, and Jörg Weber — Technische Universität Dresden, 01062 Dresden, Germany

Hydrogen in ZnO is a common impurity that strongly influences its electrical and optical properties, in particular, via formation of shallow donor states [1,2].
An IR absorption study of a H-related defect resulting in a local vibrational mode (LVM) at 3326 cm⁻¹ [3] is presented. We observed that a sub band-gap illumination results in the appearance of an IR absorption line at 3358 cm⁻¹ at the expense of the 3326 cm⁻¹ signal. The results of isotope substitution experiments strongly reveal that the two signals are LVMs of the same defect in different charge states. From the energy of the sub band-gap light it is concluded that this defect has a deep level in the band-gap. Data on thermal stability as well as the transition between the different charge states at different temperatures are also presented. The microscopic nature of the defect will be discussed.

C.G. Van de Walle, Phys. Rev. Lett. 85, 1012 (2000)
E.V. Lavrov, F. Herklotz, C.G. Van de Walle, Phys. Rev. B 79, 165210 (2009).
M.D. McCluskey, S.J. Jokela, K.K. Zhuravlev, P.J. Simpson, and K.G. Lynn, Appl. Phys. Lett. 81, 3807 (2002).