Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe

HL: Fachverband Halbleiterphysik

HL 57: Focussed Session: ZnO-based Semiconductors

HL 57.1: Hauptvortrag

Donnerstag, 25. März 2010, 14:00–14:30, H17

Exploring Zinc Oxide: From band structure towards devices — •Bruno Meyer — 1. Physik. Institut, JLU Giessen, Giessen

One of the key issues in modern solid-state electronics is energy band engineering for design and fabrication of heterostructures and quantum wells. ZnO can be alloyed with MgO to form high quality single crystal MgxZn1-xO films with the Mg content up to 33 at %, while retaining the wurzite crystal structure. Alloying ZnO with MgO increases the direct bandgap of ZnO from 3.3 eV to about 4.0 eV (for 33% Mg incorporation). ZnO/ MgxZn1-xO forms type-I heterostructures, ideal for electrical and optical confinement. The small lattice mismatch and high bandgap ensure the effective use of MgxZn1-xO as a barrier layer for ZnO based heterostructures and quantum wells.

We report on the investigation of electronic and opto-electronic band structure effects of ZnO/MgZnO heterostructures grown on different polar and non-polar ZnO bulk substrates, and ZnO on GaN (AlGaN) templates where large conduction band offsets give rise to type II band alignment and band offsets can be tuned by the different heterovalent interfaces. From a substantially improved microscopic understanding of the electronic and opto-electronic properties of the ZnO-based quantum heterostructures one can expect to predict future device applications with complex designs such as field effect transistors and 2DEGs.