Regensburg 2010 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 58: Photonic Crystals: Experiment

HL 58.5: Talk

Thursday, March 25, 2010, 17:00–17:15, H13

Optical properties of waveguide circuits in GaAs-based photonic crystals — •Rebecca Saive, Norman Hauke, Alexander W. Holleitner, and Jonathan J. Finley — Walter Schottky Institut, Technische Universität München, Am Coulombwall 3, D-85748 Garching, Germany

We present micro-photoluminescence measurements on GaAs photonic crystal waveguides, designed with transmission bands between 875 nm and 950 nm. The photonic waveguide properties were simulated using RSOFTs CAD, FullWave and BandSolve modules which operate with finite-difference time-domain and planewave expansion methods, respectively. The structures were defined by electron-beam lithography and then, transferred to the GaAs matrix with reactive ion etching. In a final step, we underetched the waveguide structures with hydrofluoric acid to obtain a freestanding membrane. Light was coupled into the waveguide via a tapered optical fiber, while the transmitted, out-of-plane scattered light, at the end of the waveguide was collected with a microscope objective and detected with a Si-photodiode. The transmission bands in simulation and experiment are in good agreement.