Regensburg 2010 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 60: Poster II: Optical Properties, incl. Photonic Crystals and Ultrafast Phenomena
HL 60.38: Poster
Thursday, March 25, 2010, 18:00–20:00, Poster D1
Experiments on the spin dephasing anisotropy in asymmetrically Si-delta-doped (001)-grown Al0.3Ga0.7As/GaAs quantum wells — •Dominik Waller1, Michael Griesbeck1, Vera Lechner1, Sergey Ganichev1, Tobias Korn1, Dieter Schuh2, Werner Wegscheider1, and Christian Schüller1 — 1Institut für Experimentelle und Angewandte Physik, Universität Regensburg, Germany — 2Laboratorium für Festkörperphysik, ETH Zürich, Switzerland
It was theoretically predicted [1] and demonstrated experimentally [2] that in zinc blende semiconductors the inplane spin dephasing time of asymmetric, (001)-grown quantum wells depend on the crystal orientation due to the different symmetries of the Rashba and Dresselhaus effective spin-orbit fields. In a series of asymmetrically Si-delta-doped, (001)-grown Al0.3Ga0.7As/GaAs multiple quantum wells, where the Si-delta-doping layer position is varied on both sides of the quantum well, the spin relaxation anisotropy was detected at room temperature by using the magnetogyrotropic photogalvanic effect [3].
In our experiments we investigate the spin dephasing anisotropy of this sample series at low temperatures. By using ultrafast time-resolved Kerr rotation technique we were able to detect dependencies of the spin dephasing anisotropy on the sample temperature and the asymmetry of the doping, which controls the strength of the Rashba term.
N. S. Averkiev and L. E. Golub, Phys. Rev. B 60, 15582 (1999)
N. S. Averkiev et al., Phys. Rev. B 74, 033305 (2006)
V. Lechner et al., Appl. Phys. Lett. 94, 242109 (2009)