Regensburg 2010 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 61: Poster II: Materials, Interfaces and Heterostructures

HL 61.10: Poster

Thursday, March 25, 2010, 18:00–20:00, Poster D1

Fabrication of suspended graphene sheets — Benjamin Söll, Dieter Weiss, and •Jonathan Eroms — Institut für Experimentelle und Angewandte Physik, Universität Regensburg, 93040 Regensburg

We report the fabrication of single layer graphene devices suspended 150 nm above a Si/SiO₂ substrate. Suspension of the graphene flake was achieved by dipping entire conventional devices with gold contacts into buffered oxide etch. Thereby we removed 150 nm of SiO₂, including the area underneath the flake, while SiO₂ masked by the gold electrodes remained unetched. To dry the samples we used a critical point dryer to avoid the surface-tension-induced collapse of the suspended sheet. After suspending, the devices were baked in forming gas at 200 ^∘C for 10 minutes to remove residues left from sample fabrication. Further cleaning was carried out by current induced cleaning in the cryostat, with a typical current of 1mA per µm of sample width. First measurements show an improvement of sample properties after current induced cleaning.