Regensburg 2010 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 61: Poster II: Materials, Interfaces and Heterostructures
HL 61.13: Poster
Thursday, March 25, 2010, 18:00–20:00, Poster D1
Effect of swift heavy ion irradiation on diamond — •Anne-Katrin Nix1, Ulrich Vetter1, Daniel Severin2, Christina Trautmann2, and Hans Hofsäss1 — 1II. Physikalisches Institut, Georg-August-Universität Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen, Germany — 2GSI Helmholtzzentrum für Schwerionenforschung, Planckstraße 1, 64291 Darmstadt, Germany
Diamond is a wide band-gap semiconductor with many applications. Some of these applications require doping of diamond, which can be achieved by ion implantation. The process has the detrimental effect to produce many lattice defects, which in principal can be removed by thermal annealing. In the case of diamond, the treatment requires high temperatures which may result in surface graphitization before electronic or optical activation of the dopants becomes successful. In this work, we tested swift heavy ion beams as possible alternative method for annealing of doped diamonds as analyzed in [1]. Type Ia brownish diamonds were implanted with 100 keV Argon of fluences between 3 · 1013 and 1014 ions/cm2. Subsequently, the samples were irradiated at 500 ∘C using 1.4 GeV Xenon of fluence 2.8 · 1012 ions/cm2. Before and after implantation and irradiation, the cathodoluminescence of the samples was examined. We found that tempering alone at 500 ∘C for 1.5 h improves the luminescence and reduces the implantation damage. Swift heavy ion irradiation however did not lead to defect annealing and in non-implanted diamonds, the ion exposure leads to the formation of H3 centers.
[1] J. Nakata, Phys. Rev. B, 60 (1999) 2747