Regensburg 2010 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 61: Poster II: Materials, Interfaces and Heterostructures

HL 61.17: Poster

Thursday, March 25, 2010, 18:00–20:00, Poster D1

Ni(Al)-SiC-Interfaces studied by Transmission Electron Microscopy — •Alexander Alexewicz¹, Hartmut Bracht¹, Kathrin Rüschenschmidt², and Roland Rupp² — ¹Institut für Materialphysik, WWU Münster — ²Infineon Technologies AG Villach

The development of a reliable, low-ohmic contact between a metallic conductor and a p-doped SiC-semiconductor is not yet controllable. An empirical approach is the use of nickel as metal-contact. SiC-Wafers with NiAl-layers of two different thicknesses (40 and 150 nm) on top were annealed at 980°C. For understanding the behaviour of the involved elements, analyses of the microstructure in the contact area have been performed. High Resolution Transmission Electron Microscopy (HRTEM) gives a representation of the atomic structure on a nanometer scale. In order to identify the silicide, which is formed in the layer, and to detect the aluminium distribution, Energy Dispersive X-Ray Spectroscopy (EDX) is used. The released carbon as well as the content of oxygen is localized by Electron Energy Loss Spectroscopy (EELS).