Regensburg 2010 – scientific programme

Parts | Days | Selection | Search | Downloads | Help

HL: Fachverband Halbleiterphysik

HL 61: Poster II: Materials, Interfaces and Heterostructures

HL 61.23: Poster

Thursday, March 25, 2010, 18:00–20:00, Poster D1

Epitaxial growth of ZnS thin films on GaP and GaAs — •Udo Römer, Stefan Lautenschläger, Sebastian Eisermann, Oliver Graw, Melanie Pinnisch, Sven Ole Steinmüller, Jürgen Janek, and Bruno K. Meyer — I. Physikalisches Institut und Institut für Physikalische Chemie Justus-Liebig-Universität Giessen

Due to its large band gap of 3.6 eV ZnS is a promising semiconductor for optoelectronic applications. Epitaxial ZnS films can be grown in zincblende structure using substrates like GaP or GaAs. For many applications, for example the construction of quantum well structures, this is an advantage compared to other wide band gap semiconductors like ZnO or GaN which crystallizes in the wurtzite structure only. To study the effects of the different substrates and the growth parameters on the quality of the ZnS films, we have investigated the films using X-ray diffraction (XRD), low temperature photoluminescence (PL), atomic force microscopy (AFM) and time of flight secondary ion mass spectroscopy (TOF-SIMS). The undoped films are electrically insulating, first experiments to dope the films n-type were undertaken.