Regensburg 2010 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 61: Poster II: Materials, Interfaces and Heterostructures
HL 61.25: Poster
Donnerstag, 25. März 2010, 18:00–20:00, Poster D1
Systematic Study of the Influence of Photo-Generated Carriers on the Mn-Spins in CdMnTe Quantum Wells — •Sina Zapf1, Christian Kehl1, Hedwig Mueller1, Georgy Astakhov1, Jean Geurts1, Wolfgang Ossau1, Yuri Kusrayev2, Kyrill Kavokin2, Tomek Wojtowicz3 und Greg Karczewski3 — 1Universitaet Wuerzburg, Phys. Inst., EP3, 97074 Wuerzburg, Germany — 2Ioffe Institute, RAS, 194021 St. Petersburg, Russia — 3Institute of Physics, PAN, 02668 Warsaw, Poland
In II-VI diluted magnetic semiconductor quantum wells the strong exchange interaction between the magnetic ions and a two-dimensional gas of heavy holes (2DHG) is predicted to reduce the Zeeman splitting of localized ion spins in an in-plane magnetic field [1]. This can be demonstrated by Spin-Flip-Raman Spectroscopy in a modulation doped CdMnTe/CdMgTe quantum well influencing the 2DHG concentration by photo-generated carriers from above barrier with the modulation doping caused by a thin capping layer of the quantum well.
Now a clear decrease of the Zeeman splitting quantified by the g-factor of the Mn-ions with increasing net charge carrier has been observed systematically by varying the cap layer thickness and the Mn-content, respectively. This influences specifically the carrier dynamics and thus the g-factor.
[1] K.V. Kavokin, Phys. Rev. B 59, 9822 (1999)