Regensburg 2010 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 61: Poster II: Materials, Interfaces and Heterostructures

HL 61.27: Poster

Donnerstag, 25. März 2010, 18:00–20:00, Poster D1

Defect induced changes on the dynamics of the Mn 3d⁵ luminescence in ZnS:Mn nanowires — •Uwe Kaiser¹, Limei Chen¹, Wolfram Heimbrodt¹, Sebastian Geburt², and Carsten Ronning² — ¹Dept. Physics, Philipps University Marburg, Germany — ²Inst. for Solid State Physics, Friedrich-Schiller-University Jena, Germany

ZnS nanowires with diameters between 100-300 nm and lengths of several micrometer have been ion-implanted with Mn yielding a concentration of 9,91· 10¹⁷ cm⁻³. The concentration of defects were varried by different annealing and Mn-implantation temperatures. The samples were afterwards irradiated with different fluence of Neon in order to create controlled numbers of defects.

The nanowires were studied by photoluminescence spectroscopy at 10 K. The temporal behavior of the internal Mn²⁺(3d⁵) luminescence was measured in dependence of the defect concentration. The migration of Mn excitation is based on the dipol-dipol interaction inside the Mn subsystem. The decay is determined by dipol-dipol transfer from Mn to killer centres leading to a non-radiative annihilation. To interpret the data a modified Förster model based on dipol-dipol interaction was applied [1]. The aim of this work was to reveal a relation between the concentration of defects and the behaviour of the transients of the Mn photoluminescence.
[1] L.Chen et al., Phys Rev B 76, 115325 (2007)