Regensburg 2010 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 61: Poster II: Materials, Interfaces and Heterostructures
HL 61.28: Poster
Donnerstag, 25. März 2010, 18:00–20:00, Poster D1
THz photoresponse of devices with quantum wells of narrow-gap semiconductors. — •Fathi Gouider1, Yuri.B. Vasilyev2, Christoph Brüne3, Hartmut Buhmann3, Jens Könemann4, Phil.D. Buckle5, and Georg Nachtwei1 — 1Institut für Angewandte Physik, Technische Universität Braunschweig, Germany — 2A. F. Ioffe Physical Technical Institute,St. Petersburg, Russia — 3Fakultät für Physik und Astronomie, Julius-Maximilians-Universität Würzburg,Germany — 4Physikalisch-Technische Bundesanstalt, Braunschweig, Germany — 5QinetiQ Ltd, Malvern WR14 3PS, United Kingdom
The THz spectral range is very intersting both from the aspect of fundamental physics as for technical applications.The THz waves we generate by a p-Ge laser system (120µm < λ < 180µm). We present observations of the photoresponse (PR) obtained at samples made from wafers with a narrow gap as HgTe quantum wells embedded in barriers of HgCdTe as well as InSb quantum wells embedded in barriers of AlInSb. We observed the cyclotron resonance by the measurement of the transmission as a function of the magnetic field B. Further, we measured the photoconductivity in Corbino-shaped devices made from the HgCdTe/HgTe/HgCdTe and AlInSb/InSb/AlInSb wafers.