Regensburg 2010 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 61: Poster II: Materials, Interfaces and Heterostructures

HL 61.34: Poster

Thursday, March 25, 2010, 18:00–20:00, Poster D1

Electroluminescence of doped and undoped AlN/SiC-heterojunctions — •Christoph Brüsewitz, Ulrich Vetter, and Hans Hofsäss — II. Physikalisches Institut, Georg-August-Universität Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen, Germany

AlN with its large and direct bandgap is a useful host for optoelectronic applications. Grown on 6H-SiC, a heterojunction is created, forming a diode. The light emitted by n-doped 6H-SiC via electroluminescence forms a broad band with a maximum at a wavelength of 475 nm. With the AlN layer on the surface, nitrogen atoms can diffuse into the 6H-SiC, creating new energy levels. Depending on the direction of the current and additonal dopants in the AlN layer, the carrier concentration changes and new levels are available, resulting in different colours. It is shown that in this heterojunction blue, red and white colours are feasible.