Regensburg 2010 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 61: Poster II: Materials, Interfaces and Heterostructures
HL 61.36: Poster
Donnerstag, 25. März 2010, 18:00–20:00, Poster D1
The influence of self-assembled quantum dots on the electrical properties of an inverted 2DEG — •Dominik Scholz1, Antonio Badolato2, Dieter Schuh1, Imke Gronwald1, Christian Reichl1, Werner Wehscheider3, and Elisabeth Reiger1 — 1Institute for Applied and Experimental Physics, University of Regensburg, Germany — 2Department of Physics and Astronomy, University of Rochester, US — 3Laboratory for Solid State Physics, ETH Zurich, Switzerland
The combination of two-dimensional electron gases (2DEGs) with self-assembled quantum dots (sa-QDs) in the vicinity of the 2DEG would enable the realization of a quantum optical interface. In such a quantum interface a single electron spin located in a gate-defined QD in the 2DEG could be converted into a polarized photon via tunneling into the optically active sa-QD [1]. Studies on the influence of sa-QDs on a 2DEG have already been performed on conventional 2DEG systems [2], however, for the proposed quantum optical interface a structure based on inverted 2DEGs is more favorable.
We fabricated various samples consisting of an inverted 2DEG with sa-QDs grown close to the 2DEG, varying the (tunneling) distance between the sa-QDs and the 2DEG as well as the QD density. We determined the electron mobility as well as the carrier density by Hallbar and van-der-Pauw measurements and correlated the results to the QD density and the tunneling distance. By this an optimized sample design for the quantum optical interface can be developed.