Regensburg 2010 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 61: Poster II: Materials, Interfaces and Heterostructures
HL 61.39: Poster
Thursday, March 25, 2010, 18:00–20:00, Poster D1
Suppression of interfacial intermixing of MBE grown Heusler Alloy Ni2MnIn on (001)InAs — •Sascha Bohse1, Andriy Zolotaryov1, Stefan Singer1, Andreas Volland1, Dieter Lott2, Andrea Stemmann1, Christian Heyn1, and Wolfgang Hansen1 — 1Universität Hamburg, Institut für Angewandte Physik, Germany — 2GKSS Forschungszentrum, Germany
We study MBE grown Heusler Alloy Ni2MnIn films on (001)InAs in order to inject spin polarized currents into semiconductor heterostructures. Our previous investigations revealed an optimal growth temperature for deposition of Heusler films on (001)InAs in the favored L21 phase at 300∘C[1]. However, at this temperature a strong interfacial intermixing is found that reduces the quality of the interface. We pursue two promising methods to overcome the intermixing and present first results. Firstly, the application of a thin MgO layer as a diffusion barrier embedded between the substrate and the Heusler film is investigated. The second method is to use at the interface a growth temperature of 80 ∘C, at which intermixing is negligible, and ramp up the temperature to 300 ∘C during Heusler film growth. The structural properties of films with thicknesses of 20, 60 and 100 nm are studied with atomic force microscopy (AFM) and X-ray reflectivity measurements (XRR). The composition is analyzed with energy dispersive X-ray spectroscopy (EDX). For magnetization measurements SQUID magnetometry has been used.
[1] A. Zolotaryov et al. , Journal of Crystal Growth 311 (2009) 2397-2404